MOCVD-Grown Indium Phosphide Nanowires for Optoelectronics
نویسندگان
چکیده
منابع مشابه
High Optical Quality Polycrystalline Indium Phosphide Grown on Metal Substrates by MOCVD for Photovoltaic Applications
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Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphid...
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We have characterized the fundamental photoluminescence (PL) properties of individual, isolated indium phosphide (InP) nanowires to define their potential for optoelectronics. Polarization-sensitive measurements reveal a striking anisotropy in the PL intensity recorded parallel and perpendicular to the long axis of a nanowire. The order-of-magnitude polarization anisotropy was quantitatively ex...
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The tunable physical and electronic structure of III-V semiconductor alloys renders them uniquely useful for a variety of applications, including biological imaging, transistors, and solar energy conversion. However, their fabrication typically requires complex gas phase instrumentation or growth from high-temperature melts, which consequently limits their prospects for widespread implementatio...
متن کاملApplication of the point-defect analysis technique to zinc doping of MOCVD indium phosphide
Epitaxial layers of p-type indium phosphide (InP) have been grown by low pressure, metal organic chemical vapour deposition (LP-MOCVD) using diethylzinc (DEZn) as the p-dopant source. Proposed zinc-associated InP point defects and experimental DEZn doping data were used to formulate a point-defect equilibrium model of the Zn doping process of MOCVD InP. The model equation is contrasted with the...
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ژورنال
عنوان ژورنال: Advanced Materials Research
سال: 2013
ISSN: 1662-8985
DOI: 10.4028/www.scientific.net/amr.832.201